CMOS imager with a self-aligned buried contact

ABSTRACT

An imaging device formed as a CMOS semiconductor integrated circuit includes a buried contact line between the floating diffusion region and the gate of a source follower output transistor. The self-aligned buried contact in the CMOS imager decreases leakage from the diffusion region into the substrate which may occur with other techniques for interconnecting the diffusion region with the source follower transistor gate. Additionally, the self-aligned buried contact is optimally formed between the floating diffusion region and the source follower transistor gate which allows the source follower transistor to be placed closer to the floating diffusion region, thereby allowing a greater photo detection region in the same sized imager circuit.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application a continuation of application U.S. patent applicationSer. No. 10/278,792, filed Oct. 24, 2002, which is a continuationapplication of U.S. patent application Ser. No. 09/715,076, filed Nov.20, 2000, now U.S. Pat. No. 6,495,434 which is a divisional applicationof U.S. patent application Ser. No. 09/335,775 filed Jun. 18, 1999,which matured into U.S. Pat. No. 6,326,652, issued Dec. 4, 2001, theentirety of each of which is incorporated herein by reference.

FIELD OF THE INVENTION

The invention relates generally to improved semiconductor imagingdevices and in particular to a silicon imaging device which can befabricated using a standard CMOS process. Particularly, the inventionrelates to a CMOS imager having a self-aligned buried contact formedbetween a pair of transistor gates or a transistor gate and an isolationregion.

DISCUSSION OF RELATED ART

There are a number of different types of semiconductor-based imagers,including charge coupled devices (CCDs), photodiode arrays, chargeinjection devices and hybrid focal plane arrays. CCDs are often employedfor image acquisition and enjoy a number of advantages which makes itthe incumbent technology, particularly for small size imagingapplications. CCDs are also capable of large formats with small pixelsize and they employ low noise charge domain processing techniques.However, CCD imagers also suffer from a number of disadvantages. Forexample, they are susceptible to radiation damage, they exhibitdestructive read out over time, they require good light shielding toavoid image smear and they have a high power dissipation for largearrays. Additionally, while offering high performance, CCD arrays aredifficult to integrate with CMOS processing in part due to a differentprocessing technology and to their high capacitances, complicating theintegration of on-chip drive and signal processing electronics with theCCD array. While there have been some attempts to integrate on-chipsignal processing with the CCD array, these attempts have not beenentirely successful. CCDs also must transfer an image by line chargetransfers from pixel to pixel, requiring that the entire array be readout into a memory before individual pixels or groups of pixels can beaccessed and processed. This takes time. CCDs may also suffer fromincomplete charge transfer from pixel to pixel during charge transferwhich also results in image smear.

Because of the inherent limitations in CCD technology, there is aninterest in CMOS imagers for possible use as low cost imaging devices. Afully compatible CMOS sensor technology enabling a higher level ofintegration of an image array with associated processing circuits wouldbe beneficial to many digital applications such as, for example, incameras, scanners, machine vision systems, vehicle navigation systems,video telephones, computer input devices, surveillance systems, autofocus systems, star trackers, motion detection systems, imagestabilization systems and data compression systems for high-definitiontelevision.

The advantages of CMOS imagers over CCD imagers are that CMOS imagershave a low voltage operation and low power consumption; CMOS imagers arecompatible with integrated on-chip electronics (control logic andtiming, image processing, and signal conditioning such as A/Dconversion); CMOS imagers allow random access to the image data; andCMOS imagers have lower fabrication costs as compared with theconventional CCD since standard CMOS processing techniques can be used.Additionally, low power consumption is achieved for CMOS imagers becauseonly one row of pixels at a time needs to be active during the readoutand there is no charge transfer (and associated switching) from pixel topixel during image acquisition. On-chip integration of electronics isparticularly advantageous because of the potential to perform manysignal conditioning functions in the digital domain (versus analogsignal processing) as well as to achieve a reduction in system size andcost.

A CMOS imager circuit includes a focal plane array of pixel cells, eachone of the cells including either a photogate, a photodiode, or aphotoconductor overlying a substrate for accumulating photo-generatedcharge in the underlying portion of the substrate. A readout circuit isconnected to each pixel cell and includes at least an output fieldeffect transistor formed in the substrate and a charge transfer sectionformed on the substrate adjacent the photogate, photodiode, or thephotoconductor having a sensing node, typically a floating diffusionnode, connected to the gate of an output transistor. The imager mayinclude at least one electronic device such as a transistor fortransferring charge from the underlying portion of the substrate to thefloating diffusion node and one device, also typically a transistor, forresetting the node to a predetermined charge level prior to chargetransference.

In a CMOS imager, the active elements of a pixel cell perform thenecessary functions of: (1) photon to charge conversion; (2)accumulation of image charge; (3) transfer of charge to the floatingdiffusion node accompanied by charge amplification; (4) resetting thefloating diffusion node to a known state before the transfer of chargeto it; (5) selection of a pixel for readout; and (6) output andamplification of a signal representing pixel charge. Photo charge may beamplified when it moves from the initial charge accumulation region tothe floating diffusion node. The charge at the floating diffusion nodeis typically converted to a pixel output voltage by a source followeroutput transistor. The photosensitive element of a CMOS imager pixel istypically either a depleted p-n junction photodiode or a field induceddepletion region beneath a photogate or a photoconductor. Forphotodiodes, image lag can be eliminated by completely depleting thephotodiode upon readout.

CMOS imagers of the type discussed above are generally known asdiscussed, for example, in Nixon et al., “256×256 CMOS Active PixelSensor Camera-on-a-Chip,” IEEE Journal of Solid-State Circuits, Vol.31(12) pp. 2046-2050, 1996; Mendis et al, “CMOS Active Pixel ImageSensors,” IEEE Transactions on Electron Devices, Vol. 41(3) pp. 452-453,1994 as well as U.S. Pat. No. 5,708,263 and U.S. Pat. No. 5,471,515,which are herein incorporated by reference.

To provide context for the invention, an exemplary CMOS imaging circuitis described below with reference to FIG. 1. The circuit describedbelow, for example, includes a photogate for accumulatingphoto-generated charge in an underlying portion of the substrate. Itshould be understood that the CMOS imager may include a photodiode orother image to charge converting device, in lieu of a photogate, as theinitial accumulator for photo-generated charge.

Reference is now made to FIG. 1 which shows a simplified circuit for apixel of an exemplary CMOS imager using a photogate and having a pixelphotodetector circuit 14 and a readout circuit 60. It should beunderstood that while FIG. 1 shows the circuitry for operation of asingle pixel, that in practical use there will be an M×N array of pixelsarranged in rows and columns with the pixels of the array accessed usingrow and column select circuitry, as described in more detail below.

The photodetector circuit 14 is shown in part as a cross-sectional viewof a semiconductor substrate 16 typically a p-type silicon, having asurface well of p-type material 20. An optional layer 18 of p-typematerial may be used if desired, but is not required. Substrate 16 maybe formed of, for example, Si, SiGe, Ge, and GaAs. Typically the entiresubstrate 16 is p-type doped silicon substrate and may contain a surfacep-well 20 (with layer 18 omitted), but many other options are possible,such as, for example p on p− substrates, p on p+ substrates, p-wells inn-type substrates or the like. The terms wafer or substrate used in thedescription includes any semiconductor-based structure having an exposedsurface in which to form the circuit structure used in the invention.Wafer and substrate are to be understood as including,silicon-on-insulator (SOI) technology, silicon-on-sapphire (SOS)technology, doped and undoped semiconductors, epitaxial layers ofsilicon supported by a base semiconductor foundation, and othersemiconductor structures. Furthermore, when reference is made to a waferor substrate in the following description, previous process steps mayhave been utilized to form regions/junctions in the base semiconductorstructure or foundation.

An insulating layer 22 such as, for example, silicon dioxide is formedon the upper surface of p-well 20. The p-type layer may be a p-wellformed in substrate 16. A photogate 24 thin enough to pass radiantenergy or of a material which passes radiant energy is formed on theinsulating layer 22. The photogate 24 receives an applied control signalPG which causes the initial accumulation of pixel charges in n+ region26. The n+ type region 26, adjacent one side of photogate 24, is formedin the upper surface of p-well 20. A transfer gate 28 is formed oninsulating layer 22 between n+ type region 26 and a second n+ typeregion 30 formed in p-well 20. The n+ regions 26 and 30 and transfergate 28 form a charge transfer transistor 29 which is controlled by atransfer signal TX. The n+ region 30 is typically called a floatingdiffusion region. It is also a node for passing charge accumulatedthereat to the gate of a source follower transistor 36 described below.A reset gate 32 is also formed on insulating layer 22 adjacent andbetween n+ type region 30 and another n+ region 34 which is also formedin p-well 20. The reset gate 32 and n+ regions 30 and 34 form a resettransistor 31 which is controlled by a reset signal RST. The n+ typeregion 34 is coupled to voltage source VDD. The transfer and resettransistors 29, 31 are n-channel transistors as described in thisimplementation of a CMOS imager circuit in a p-well. It should beunderstood that it is possible to implement a CMOS imager in an n-wellin which case each of the transistors would be p-channel transistors. Itshould also be noted that while FIG. 1 shows the use of a transfer gate28 and associated transistor 29, this structure provides advantages, butis not required.

Photodetector circuit 14 also includes two additional n-channeltransistors, source follower transistor 36 and row select transistor 38.Transistors 36, 38 are coupled in series, source to drain, with thesource of transistor 36 also coupled over lead 40 to voltage source VDDand the drain of transistor 38 coupled to a lead 42. The drain of rowselect transistor 38 is connected via conductor 42 to the drains ofsimilar row select transistors for other pixels in a given pixel row. Aload transistor 39 is also coupled between the drain of transistor 38and a voltage source VSS. Transistor 39 is kept on by a signal VLNapplied to its gate.

The imager includes a readout circuit 60 which includes a signal sampleand hold (S/H) circuit including a S/H n-channel field effect transistor62 and a signal storage capacitor 64 connected to the source followertransistor 36 through row transistor 38. The other side of the capacitor64 is connected to a source voltage VSS. The upper side of the capacitor64 is also connected to the gate of a p-channel output transistor 66.The drain of the output transistor 66 is connected through a columnselect transistor 68 to a signal sample output node VOUTS and through aload transistor 70 to the voltage supply VDD. A signal called “signalsample and hold” (SHS) briefly turns on the S/H transistor 62 after thecharge accumulated beneath the photogate electrode 24 has beentransferred to the floating diffusion node 30 and from there to thesource follower transistor 36 and through row select transistor 38 toline 42, so that the capacitor 64 stores a voltage representing theamount of charge previously accumulated beneath the photogate electrode24.

The readout circuit 60 also includes a reset sample and hold (S/H)circuit including a S/H transistor 72 and a signal storage capacitor 74connected through the S/H transistor 72 and through the row selecttransistor 38 to the source of the source follower transistor 36. Theother side of the capacitor 74 is connected to the source voltage VSS.The upper side of the capacitor 74 is also connected to the gate of ap-channel output transistor 76. The drain of the output transistor 76 isconnected through a p-channel column select transistor 78 to a resetsample output node VOUTR and through a load transistor 80 to the supplyvoltage VDD. A signal called “reset sample and hold” (SHR) briefly turnson the S/H transistor 72 immediately after the reset signal RST hascaused reset transistor 31 to turn on and reset the potential of thefloating diffusion node 30, so that the capacitor 74 stores the voltageto which the floating diffusion node 30 has been reset.

The readout circuit 60 provides correlated sampling of the potential ofthe floating diffusion node 30, first of the reset charge applied tonode 30 by reset transistor 31 and then of the stored charge from thephotogate 24. The two samplings of the diffusion node 30 charges producerespective output voltages VOUTR and VOUTS of the readout circuit 60.These voltages are then subtracted (VOUTS-VOUTR) by subtractor 82 toprovide an output signal terminal 81 which is an image signalindependent of pixel to pixel variations caused by fabricationvariations in the reset voltage transistor 31 which might cause pixel topixel variations in the output signal.

FIG. 2 illustrates a block diagram for a CMOS imager having a pixelarray 200 with each pixel cell being constructed in the manner shown byelement 14 of FIG. 1. FIG. 4 shows a 2×2 portion of pixel array 200.Pixel array 200 comprises a plurality of pixels arranged in apredetermined number of columns and rows. The pixels of each row inarray 200 are all turned on at the same time by a row select line, e.g.,line 86, and the pixels of each column are selectively output by acolumn select line, e.g., line 42. A plurality of rows and column linesare provided for the entire array 200. The row lines are selectivelyactivated by the row driver 210 in response to row address decoder 220and the column select lines are selectively activated by the columndriver 260 in response to column address decoder 270. Thus, a row andcolumn address is provided for each pixel. The CMOS imager is operatedby the control circuit 250 which controls address decoders 220, 270 forselecting the appropriate row and column lines for pixel readout, androw and column driver circuitry 210, 260 which apply driving voltage tothe drive transistors of the selected row and column lines.

FIG. 3 shows a simplified timing diagram for the signals used totransfer charge out of photodetector circuit 14 of the FIG. 1 CMOSimager. The photogate signal PG is nominally set to 5V and the resetsignal RST is nominally set at 2.5V. As can be seen from the figure, theprocess is begun at time t₀ by briefly pulsing reset voltage RST to 5V.The RST voltage, which is applied to the gate 32 of reset transistor 31,causes transistor 31 to turn on and the floating diffusion node 30 tocharge to the VDD voltage present at n+ region 34 (less the voltage dropVth of transistor 31). This resets the floating diffusion node 30 to apredetermined voltage (VDD-Vth). The charge on floating diffusion node30 is applied to the gate of the source follower transistor 36 tocontrol the current passing through transistor 38, which has been turnedon by a row select (ROW) signal, and load transistor 39. This current istranslated into a voltage on line 42 which is next sampled by providinga SHR signal to the S/H transistor 72 which charges capacitor 74 withthe source follower transistor output voltage on line 42 representingthe reset charge present at floating diffusion node 30. The PG signal isnext pulsed to 0 volts, causing charge to be collected in n+ region 26.A transfer gate voltage pulse TX, similar to the reset pulse RST, isthen applied to transfer gate 28 of transistor 29 to cause the charge inn+ region 26 to transfer to floating diffusion node 30. It should beunderstood that for the case of a photogate, the transfer gate voltageTX may be pulsed or held to a fixed DC potential. For the implementationof a photodiode with a transfer gate, the transfer gate voltage TX mustbe pulsed. The new output voltage on line 42 generated by sourcefollower transistor 36 current is then sampled onto capacitor 64 byenabling the sample and hold switch 62 by signal SHS. The column selectsignal is next applied to transistors 68 and 70 and the respectivecharges stored in capacitors 64 and 74 are subtracted in subtractor 82to provide a pixel output signal at terminal 81. It should also beunderstood that CMOS imagers may dispense with the transistor gate 28and associated transistor 29 or retain these structures while biasingthe transfer transistor gate 28 to an always “on” state.

The operation of the charge collection of the CMOS imager is known inthe art and is described in several publications such as Mendis et al.,“Progress in CMOS Active Pixel Image Sensors,” SPIE Vol. 2172, pp. 19-291994; Mendis et al., “CMOS Active Pixel Image Sensors for HighlyIntegrated Imaging Systems,” IEEE Journal of Solid State Circuits, Vol.32(2), 1997; and Eric R, Fossum, “CMOS Image Sensors: Electronic Cameraon a Chip, IEDM Vol. 95 pages 17-25 (1995) as well as otherpublications. These references are incorporated herein by reference.

Prior CMOS imagers suffer from several drawbacks regarding the chargeflow and contact between different regions of the substrate, such as,for example the floating diffusion area 30 and the source followertransistor 36. For example, during etching to create the contact betweenthe floating diffusion region 30 and the source follower transistor 36caution must be taken to avoid over etching into the shallow n-dopedregion of the floating diffusion region so as to prevent potentialcharge leakage into the substrate during operation of the imager. Sincethe size of the pixel electrical signal is very small due to thecollection of photons in the photo array, the signal to noise ratio ofthe pixel should be as high as possible within a pixel. Thus, leakageinto the substrate is a significant problem to be avoided in CMOSimagers.

Additionally, the tungsten metal, which is typically used to contact thedifferent regions of the CMOS imager, is deposited with tungstenfluoride and a reaction sometimes takes place between the tungstenfluoride and the substrate resulting in the formation of siliconfluoride which creates worm holes in the substrate. These worm holescreate a conductive channel for current to leak into the substrate,creating a poor performance for the imager. Also, conventional contactregions typically include a highly n-doped region to facilitate an ohmicmetal-semiconductor contact between the contact metallization and theunderlying n-doped silicon region to achieve charge transfer. However,this same highly doped n+ region 30 creates current leakage into thesubstrate due to high electric fields caused by the abrupt junction.Also, typically there must be an over etch of the contact to account fornon-uniformities across the wafer and non-uniformity of the BPSGthickness.

Examples of the above-described drawbacks can be seen from FIGS. 5-7which show a side view of several CMOS imagers of the prior art anddescribe the floating diffusion and source follower transistor gatecontact. It should be understood that these drawbacks are also presentwhere a metal contact is required to electrically connect the CMOSimagers of the prior art. It should be understood that similar referencenumbers correspond to similar elements for FIGS. 5-7.

Reference is now made to FIG. 5. This figure shows the region betweenthe floating diffusion and the source follower transistor of a priorCMOS imager having a photogate as the photoactive area and furtherincludes a transfer gate. The imager 100 is provided with three dopedregions 143, 126 and 115, which are doped to a conductivity typedifferent from that of the substrate, for exemplary purposes regions143, 126 and 115 are treated as n type, which are within a p-well of asubstrate. The first doped region 143 is the photosite charge collector,and it underlies a portion of the photogate 142, which is a thin layerof material transparent or partially transparent to radiant energy, suchas polysilicon. The first doped region 143 is typically an n-dopedregion. An insulating layer 140 of silicon dioxide, silicon nitride, orother suitable material is formed over a surface of the doped layer 143of the substrate between the photogate 142 and first doped region 143.

The second doped region 126 transfers charge collected by the photogate142 and it serves as the source for the transfer transistor 128. Thetransfer transistor 128 includes a transfer gate 139 formed over a gateoxide layer 140. The transfer gate 139 has insulating spacers 149 formedon its sides.

The third doped region 115 is the floating diffusion region and isconnected to a gate 136 of a source follower transistor by contact lines125, 127, 129 which are typically metal contact lines as described inmore detail below. The imager 100 typically includes a highly n+ dopedregion 120 within n-doped region 115 under the floating diffusion regioncontact 125 which provides good ohmic contact of the contact 125 withthe n-doped region 115. The floating diffusion contact 125 connects n+region 120 of the floating diffusion region with the gate 136 of thesource follower transistor. In other embodiments of the prior art, theentire region 115 may be doped n+ thereby eliminating the need for n+region 120.

The source and drain regions of the source follower transistor are notseen in FIG. 5 as they are perpendicular to the page but are on eitherside of gate 136. The source follower gate 136 is usually formed of adoped polysilicon which may be silicided and which is deposited over agate oxide 140, such as silicon dioxide. The floating diffusion contact125 is usually formed of a tungsten plug typically a Ti/TiN/Wmetallization stack as described in further detail below. The floatingdiffusion contact 125 is formed in an insulating layer 135 which istypically an undoped oxide followed by the deposition of a doped oxidesuch as a BPSG layer deposited over the substrate. The tungsten metalwhich forms the floating diffusion/source follower contact 125 istypically deposited using a tungsten fluoride such as WF₆.

Typically, the layer 135 must be etched with a selective dry etchprocess prior to depositing the tungsten plug connector 125. The imager100 also includes a source follower contact 127 formed in layer 135 in asimilar fashion to floating diffusion contact 125. Source followercontact 127 is also usually formed of a tungsten plug typically aTi/TiN/W metallization stack as described in further detail below. Thefloating diffusion contact 125 and the source follower contact 127 areconnected by a metal layer 129 formed over layer 135. Typically metallayer 129 is formed of aluminum, copper or any other metal.

Separating the source follower transistor gate 136 and the floatingdiffusion region 115 is a field oxide layer 132, which serves tosurround and isolate the cells. The field oxide 132 may be formed bythermal oxidation of the substrate or in the Local Oxidation of Silicon(LOCOS) or by the Shallow Trench Isolation (STI) process which involvesthe chemical vapor deposition of an oxide material.

It should be understood that while FIG. 5 shows an imager having aphotogate as the photoactive area and additionally includes a transfertransistor, additional imager structures are also well known. Forexample, CMOS imagers having a photodiode or a photoconductor as thephotoactive area are known. Additionally, while a transfer transistorhas some advantages as described above, it is not required.

The prior art metal contacts 125, 127 described with reference to FIG. 5typically include a thin layer 123 formed of titanium, titanium nitrideor a mixture thereof formed in the etched space in the layer 135. Atungsten plug 122 is then filled in the etched space in the layer 135inside the thin layer 123. The contact 125 contacts n+ region 120 andforms a TiSi₂ area 121 by a reaction between the titanium from layer 123with the silicon substrate in n+ region 120.

Reference is now made to FIG. 6. This figure illustrates a partially cutaway side view of a semiconductor imager undergoing a processing methodaccording to the prior art. The imager 104 has the floating diffusionregion 115 having an n+ doped region 120 and the source followertransistor gate 136 already formed therein. The floating diffusion 115and the source follower gate 136 are under layer 135, which, as noted,is preferably composed of oxides, typically a layered structure of anundoped and doped, i.e., BPSG, oxides. A resist 155 is applied to layer135 in order to etch through layer 135 to form the contacts to thefloating diffusion region 115 and the source follower transistor gate136. Layer 135 is then etched to form the hole 156 in layer 135 for thefloating diffusion contact 125 and hole 157 in layer 135 for the sourcefollower transistor contact 127 as shown in FIG. 7. However, as can beseen from FIG. 7, since the field oxide 132 and layer 135 are bothsimilar oxides it is difficult to control the etching process whenattempting to align the hole 156 with the edge of the field oxide 132.In fact, the etching process often etches deep into the n+ region 120 oretches through the exposed edge of the field oxide 132 causing chargeleakage to the substrate as shown by the arrows in FIG. 7. Etching deepinto the n+ region 120 results in poor contact resistance to the n+region 120. Etching through the n+ region 120 or through the exposedregion of the filed oxide 132 can result in charge leakage to thesubstrate.

The devices described with reference to FIGS. 5-7 have severaldrawbacks. For example, during etching, caution must be taken to avoidetching through the n+ layer 120 or even deep into n-doped region 115where the n-type dopant concentration is reduced. Additionally, when thetungsten metal is deposited by the tungsten fluoride, a reactionsometimes takes place between the tungsten fluoride and the substrateresulting in the formation of silicon fluoride which creates worm holesthrough the n+ region 120 and into the substrate. These worm holes maycreate a channel for current to leak into the substrate, creating a poorperformance for the imager. While Ti/TiN barrier layers are deposited toform a good ohmic contact to the n+ region due to the TiSi2 reaction andprovide a TiN barrier between the W metallization and the Si substrate,worm holes and contact leakage still occur. Also, the prior art floatingdiffusion region 115 included the highly n+ region 120 to provide anohmic contact; however, this same highly doped n+ region sets up highelectric fields with respect to the p-type region under field oxideregion 132 which fosters current leakage into the substrate.Accordingly, a better contact which provides a good ohmic contact, whileavoiding substrate leakage is needed.

SUMMARY OF THE INVENTION

The present invention provides a CMOS imager having a self-alignedcontact. In a preferred implementation, the self-aligned contact isbetween the floating diffusion region and the gate of the sourcefollower transistor. The self-aligned contact provides a better ohmiccontact with less chance of leakage into the substrate. The self-alignedcontact allows the electrical connection of the device without thepossibility of etching into the substrate, and thereby causing leakage,while providing a sufficient ohmic contact. The self-aligned contactalso allows the imager components to be placed closer together, therebyreducing the size of a pixel and allowing an increased photoarea percell size which, it turn, increases the signal to noise ratio of theimager. In addition, the problems with worm holes and connecting of thefloating diffusion contact are completely avoided as there is no needfor the highly doped n+ region 120 in the present invention andadditionally no need for any metallization to be directly in contactwith the silicon substrate.

The above and other advantages and features of the invention will bemore clearly understood from the following detailed description which isprovided in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a representative circuit of a CMOS imager.

FIG. 2 is a block diagram of a CMOS active pixel sensor chip.

FIG. 3 is a representative timing diagram for the CMOS imager.

FIG. 4 is a representative pixel layout showing a 2×2 pixel layoutaccording to one embodiment of the present invention.

FIG. 5 is a partially cut away side view of a semiconductor imagerhaving a photogate and a transfer gate according to the prior art.

FIG. 6 shows a partially cut away side view of a semiconductor imagerundergoing a processing method according to the prior art.

FIG. 7 shows a partially cut away side view of a semiconductor imagerundergoing a processing method according to the prior art subsequent toFIG. 6.

FIG. 8 shows a partially cut away side view of a semiconductor imager ofa first embodiment of the present invention at an intermediate step ofprocessing.

FIG. 9 shows a partially cut away side view of a semiconductor imager ofthe present invention subsequent to FIG. 8.

FIG. 10 shows a partially cut away side view of a semiconductor imagerof the present invention subsequent to FIG. 9.

FIG. 11 shows a partially cut away side view of a semiconductor imagerof the present invention subsequent to FIG. 10.

FIG. 12 shows a partially cut away side view of a semiconductor imagerof the present invention subsequent to FIG. 11.

FIG. 13 shows a partially cut away side view of a semiconductor imagerof another embodiment at an intermediate step of processing.

FIG. 14 shows a partially cut away side view of a semiconductor imagerof the present invention subsequent to FIG. 13.

FIG. 15 shows a partially cut away side view of a semiconductor imagerof the present invention subsequent to FIG. 14.

FIG. 16 is an illustration of a computer system having a CMOS imageraccording to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the following detailed description, reference is made to theaccompanying drawings which form a part hereof, and in which is shown byway of illustration specific embodiments in which the invention may bepracticed. These embodiments are described in sufficient detail toenable those skilled in the art to practice the invention, and it is tobe understood that other embodiments may be utilized, and thatstructural, logical and electrical changes may be made without departingfrom the spirit and scope of the present invention.

The terms “wafer” and “substrate” are to be understood as includingsilicon-on-insulator (SOI) or silicon-on-sapphire (SOS) technology,doped and undoped semiconductors, epitaxial layers of silicon supportedby a base semiconductor foundation, and other semiconductor structures.Furthermore, when reference is made to a “wafer” or “substrate” in thefollowing description, previous process steps may have been utilized toform regions or junctions in the base semiconductor structure orfoundation. In addition, the semiconductor need not be silicon-based,but could be based on silicon-germanium, germanium, or gallium arsenide.

The term “pixel” refers to a picture element unit cell containing aphotosensor and transistors for converting electromagnetic radiation toan electrical signal. For purposes of illustration, a representativepixel is illustrated in the figures and description herein, andtypically fabrication of all pixels in an imager will proceedsimultaneously in a similar fashion. The following detailed descriptionis, therefore, not to be taken in a limiting sense, and the scope of thepresent invention is defined by the appended claims.

The invention is now described with reference to FIGS. 8-15. FIG. 8shows a partially cut away cross-sectional view of a CMOS semiconductorwafer similar to that shown in FIG. 1. It should be understood thatsimilar reference numbers correspond to similar elements for FIGS. 8-15.FIG. 8 shows the region between the floating diffusion and the sourcefollower transistor for an imager having a photodiode as thephotosensitive area and which includes a transfer gate 328. As with FIG.5 above, the source follower transistor source and drain regions are ina plane perpendicular to FIG. 8.

The pixel cell 300 includes a substrate which includes a p-type well 311formed in a substrate. It should be understood that the CMOS imager ofthe present invention can also be fabricated using p-doped regions in ann-well. The pixel cell 300 also includes a field oxide region 332, whichserves to surround and isolate the cells. The field oxide region 332 maybe formed by thermal oxidation of the substrate using the LOCOS processor by the STI process which involves the chemical vapor deposition of anoxide material.

The pixel cell 300 includes an oxide or other insulating film 318deposited on the substrate by conventional methods. Preferably the oxidefilm 318 is formed of a silicon dioxide grown onto the substrate.

A transfer transistor 328 is formed by depositing a conductive gatelayer 339 and an insulating layer 340 over the insulating layer 318 asshown in FIG. 8. A source follower transistor gate 320, and a resettransistor gate 326 are also formed over the insulating layer 318 atthis stage of processing. The gate layers 339 of the transistors arepreferably formed of doped polysilicon formed by physical depositionmethods such as chemical vapor deposition (CVD) or physical vapordeposition. The gate layers 339 may also be formed of a compositelayered structure of doped polysilicon/refractory metal silicide orbarrier metal, if desired, according to conventional methods. Preferablythe refractory metal silicide is a tungsten, titanium, tantalum orcobalt silicide. The barrier metal may be those such as titaniumnitride, tungsten nitride or the like.

The insulating layer 340 formed on the gates of each of the transfer,reset and source follower transistors may be a nitride, an oxide or acombination thereof, such as, for example, an oxide/nitride/oxide (ONO)layer, an oxide/nitride (ON) layer or a nitride/oxide layer (NO). Mostpreferably the insulating layer 340 is an ON layer. The insulatinglayers 340 may be formed by CVD.

The transfer gate 328, the source follower gate 320, and the reset gate326 have sidewall insulating spacers 349 formed on the sides of thetransistor gates 339, 320, 326 as shown in FIG. 9. The spacers may beformed out of oxide or nitride or oxynitride. An n-doped region 315 isformed in p-well 311 by ion implantation and n-doped region 352 is alsoformed in p-well 311 by ion implantation in the area that will laterbecome the photodiode 350 as shown in FIG. 9.

N-doped region 354 is also provided in p-well 311 in the area that willlater become the reset drain for the CMOS imager. It should beunderstood that the regions 315, 352 and 354 may be doped to the same ordiffering dopant concentration levels. Additionally, while two separatedoped regions are shown in the figure, a single doped region could beformed to incorporate both regions 315 and 352 if the transfertransistor is omitted. There may be other dopant implantations appliedto the wafer at this stage of processing such as n-well and p-wellimplants or transistor voltage adjusting implants. For simplicity, theseother implants are not shown in the figure.

Reference is now made to FIG. 10. A layer 360 of borophosphorosilicateglass (BPSG), phososilicate glass (PSG), borosilicate glass (BSG),undoped SiO₂ or the like is deposited over the substrate and preferablyplanarized by CMP or other methods. A resist and mask (not shown) isapplied to the layer 360 and the resist is developed and the layer 360is etched to create the opening 357. The layer 360 may be etched by anyconventional methods such as a selective wet etch or a selective dryetch to form opening 357. The dry etch conditions and the insulating capcomposition and the spacer composition are selected so that the dry orwet etch will etch the layer 360 but not the insulating cap 340 or thespacer 349. A selective etch to etch BPSG layer 360 and not etch nitridespacers 349 would typically be conducted by photomasking and drychemical etching of BPSG selective to the nitride. An example etchchemistry would include CHF₃ and O₂ at low O₂ flow rate (i.e., less than5% O₂ by volume in a CHF3/O₂ mixture), or the combination of CF₄, CH₂F₂and CHF₃. See, for example, U.S. Pat. No. 5,338,700 which is hereinincorporated by reference.

In order to etch BPSG layer 360 and not the other oxides, for examplefield oxide layer 332, the selective etching process is performed byphotomasking and dry chemical etching of BPSG selective to the oxide. Anexample etch chemistry would include C₂HF₅, CHF₃ and CH₂F₂. Preferably,the oxide selective etch is performed in a LAM 9100 etching apparatus ata C₂HF₅, CHF₃ and CH₂F₂ ratio of 1:3:4.

Polysilicon is then deposited by conventional methods to fill opening357. The polysilicon is then etched back or planarized by CMP or othermethods to form the self-aligned buried contact 325 in the opening 357as shown in FIG. 11.

Reference is now made to FIG. 12. A layer 361 of borophosphorosilicateglass (BPSG), phosphorosilicate glass (PSG), borosilicate glass (BSG),undoped SiO₂ or the like is then deposited and planarized by CMP orother methods. A resist and mask (not shown) are then applied and thelayer 361 is etched to form interconnects 370 and 371 over the n-typepolysilicon plug 325 and the source follower transistor gate 320respectively. The layer 361 may be etched by any conventional methodsuch as a selective wet etch or a selective dry etch. Interconnects 370and 371 are the same or different and may be formed of any typicalinterconnect conductive material such as metals or doped polysilicon.Interconnects 370 and 371 may be formed of doped polysilicon, refractorymetals, such as, for example, tungsten or titanium or any othermaterials, such as a composite Ti/TiN/W metallization stack as is knownin the art. Since the interconnect 370 connects to the self-alignedburied contact 357 through the n-type polysilicon plug 325, as opposedto floating diffusion region 315 itself, there is less concern aboutoveretching the layer 361 to form the hole for interconnect 370 as noleakage to the substrate will result from overetching the contact holefor interconnect 370. The interconnects 370 and 371 are connected byinterconnect 375 which is formed over layer 361. Interconnect 375 mayalso be formed of any doped polysilicon, refractory or non-refractorymetals, such as, for example, tungsten or Al or Al—Cu or Cu or any othermaterials, such as a composite Ti/TiN/W metallization stack as is knownin the art. Interconnect 375 may be formed of the same or differentmaterial as interconnects 370, 371 and may be formed at the same ordifferent times as interconnects 370, 371.

After the processing to produce the imager shown in FIG. 12, the pixelcell 301 of the present invention is then processed according to knownmethods to produce an operative imaging device. The self-aligned buriedcontact 325 is considered buried because of additional material layerswhich are formed over the substrate to produce an operative CMOS imagercircuit. For example, an insulating layer 361 may be applied andplanarized and contact holes etched therein as shown in FIG. 12 to formconductor paths to transistor gates, etc. Conventional metal andinsulation layers are formed over layer 361 and in the through holes tointerconnect various parts of the circuitry in a manner similar to thatused in the prior art to form gate connections. Additional insulatingand passivation layers may also be applied. The imager is fabricated toarrive at an operational apparatus that functions similar to the imagerdepicted in FIGS. 1-4. The self-aligned buried contact 325 is buriedwell below the normal metal layers which are applied over layer 361 andwhich are used to interconnect the IC circuitry to produce a CMOSimager.

The self-aligned buried contact 325 between the floating diffusionregion 315 and the source follower transistor gate 320 viainterconnection lines 370, 375, 371 provides a good contact between thefloating diffusion region 315 and the source follower transistor gate320 without using processing techniques which might cause charge leakageto the substrate during device operation. The self-aligned buriedcontact 325 also allows the transfer and reset transistors to be placedcloser together adjacent to the floating diffusion region 315 therebyallowing for an increased photosensitive area on the pixel and a reducedfloating diffusion region which reduces the leakage of charge tosubstrate when the floating diffusion is charged and which increases thesignal to noise ratio of the imager.

Reference is now made to FIGS. 13-15. FIG. 13 illustrates a partiallycut away side view of a semiconductor imager undergoing a processingmethod according to the present invention. This figure shows a partiallycut away semiconductor imager similar to that shown in FIGS. 8-12. Theimager as illustrated in FIGS. 13-15 is fabricated in a similar fashionto that described above with reference to FIGS. 8-12. It should beunderstood that like reference numerals designate like elements.

The pixel cell 301 includes a substrate which includes a p-type well 311formed in a substrate. The pixel cell 301 includes an n-doped region 315which forms the floating diffusion region. It should be understood thatthe CMOS imager of the present invention can also be fabricated usingp-doped regions in an n-well.

The pixel cell 301 also includes a field oxide region 332, which servesto surround and isolate the cells which may be formed by thermaloxidation of the substrate using the LOCOS process or by the STI processwhich involve the chemical vapor deposition of an oxide material. Thefield oxide region 332 forms an isolation region around the sourcefollower transistor area 330.

The pixel cell 301 includes an oxide or other insulating film 318deposited on the substrate by conventional methods. Preferably the oxidefilm 318 is formed of a silicon dioxide grown onto the substrate. Atransfer transistor 328 is formed by depositing a gate conductor layer339 and a protective insulating layer 359 over the insulating layer 318and patterning and etching the gate conductor/gate insulator layerssimultaneously as shown in FIG. 13. A source follower transistor gate320 is similarly formed over the insulating layer 318 at this stage ofprocessing. The gate conductor 339 is formed of doped polysilicon formedby physical deposition methods such as chemical vapor deposition (CVD)or physical vapor deposition. The gate conductor 339 may also be formedof a composite layered structure of doped polysilicon/barrier/metal forimproved conductivity, if desired, according to conventional methods.Preferably the refractory metal silicide is a tungsten, titanium orcobalt silicide. The barrier can be, for example, titanium nitride ortungsten nitride. The metal can be, for example, a refractory metal suchas tungsten. Preferably the protective layer 359 is a nitride or anoxide or a combination thereof, such as an oxide/nitride/oxide (ONO)layer, an oxide/nitride (ON) layer or a nitride/oxide layer (NO). Mostpreferably the protective layer 359 is an ONO layer. The protectivelayer may be formed over the gate conductive layer 339 by CVD. Thetransfer transistor 328 and the source follower transistor 320 havesidewall insulating spacers 349 as shown in FIG. 13. The sidewallspacers 349 may be formed out of oxide, nitride or oxynitride.

An n-doped region 315 is provided in p-well 311 as shown in FIG. 13. Adoped region 352 is also formed in the substrate as shown in FIG. 13 inthe area that will later become the photodiode 350. It should beunderstood that the regions 315 and 352 may be doped to the same ordifferent dopant concentration levels. Additionally, while two separatedoped regions are shown in the figure, a single doped region could beformed to incorporate both regions 315 and 352. There may be otherdopant implantations applied to the wafer at this stage of processingsuch as n-well and p-well implants or transistor voltage adjustingimplants. For simplicity, these other implants are not shown in thefigure.

Reference is made to FIG. 14. A layer 360 of borophosphorosilicate glass(BPSG), phosphorosilicate glass (PSG), borosilicate glass (BSG), undopedSiO₂ or the like is deposited over the substrate p-well 311. A resistand mask (not shown) is applied to the layer 360 and the resist isdeveloped and the layer 360 is etched to create the opening 357. Thelayer 360 may be etched by a selective wet etch or a selective dry etchto form opening 357. A selective etch to etch BPSG layer 360 and notetch nitride spacers 349 or protective layer 359 would typically beconducted by photomasking and dry chemical etching of BPSG selective tothe nitride. An example etch chemistry would include CHF₃ and O₂ at lowO₂ flow rate (i.e., less than 5% O₂ by volume in a CHF₃/O₂ mixture), orthe combination of CF₄, CH₂F₂ and CHF₃. See, U.S. Pat. No. 5,338,700which is herein incorporated by reference.

In order to etch BPSG layer 360 and not the other oxides, for examplefield oxide layer 332, the selective etching process is performed byphotomasking and dry chemical etching of BPSG selective to the oxide. Anexample etch chemistry would include C₂HF₅, CHF₃ and CH₂F₂. Preferably,the oxide selective etch is perfumed in a LAM 9100 etching apparatus ata C₂HF₅, CHF₃ and CH₂F₂ ratio of 1:3:4.

The self-aligned buried contact 325 is then formed in the opening 357 inthe layer 360. The self-aligned buried contact 325 may be formed byconventional methods. Preferably the self-aligned buried contact 325 isformed by chemical vapor deposition of doped polysilicon with afollowing polysilicon dry or wet etchback or a polysilicon CMP to leavethe polysilicon only in the opening 357.

Reference is now made to FIG. 15. The layer 362 is then deposited andplanarized by CMP or other methods. A resist (not shown) is thenapplied, openings are patterned using photolithography, and the layers360, 362, and 359 are etched to form interconnects 370 and 371 over theself-aligned buried contact 325 and the source follower transistor gate320 respectively. The layers 359, 360, 362 may be etched by anyconventional method such as a selective wet etch or a selective dryetch. Interconnects 370 and 371 may be formed, the same or differently,of any typical interconnect conductive material such as metals or dopedpolysilicon. Interconnects 370 and 371 may be formed of dopedpolysilicon, refractory metals, such as, for example, tungsten ortitanium or any other materials, such as a composite Ti/TiN/Wmetallization stack as is known in the art. Since the interconnect 370connects to the self-aligned buried contact 325, as opposed to floatingdiffusion region 315 itself, there is less concern about overetching thelayers 360 and 362 to form the hole for interconnect 370 as no leakageto the substrate will result from overetching the contact hole forinterconnect 370. The interconnects 370 and 371 are connected byinterconnect 375 which is formed over layer 362. Interconnect 375 mayalso be formed of any doped polysilicon, refractory metals, such as, forexample, tungsten, copper, aluminum, an aluminum-copper alloy or anyother materials, such as a composite Ti/TiN/W metallization stack as isknown in the art. Interconnect 375 may be formed of the same ordifferent material as interconnects 370, 371 and may be formed at thesame or different times as interconnects 370, 371.

After the processing to produce the imager shown in FIG. 15, the pixelcell 301 of the present invention is then processed according to knownmethods to produce an operative imaging device. The self-aligned buriedcontact 325 is considered buried because of additional material layerswhich are formed over the substrate to produce an operative CMOS imagercircuit. For example, an insulating layer 362 may be applied andplanarized and contact holes etched therein as shown in to formconductor paths to transistor gates, etc. Conventional metal andinsulation layers are formed over layer 362 to interconnect variousparts of the circuitry in a manner similar to that used in the prior artto form gate connections. Additional insulating and passivation layersmay also be applied. The imager is fabricated to arrive at anoperational apparatus that functions similar to the imager depicted inFIGS. 1-4. The self-aligned buried contact 325 is buried well below thenormal metal layers which are applied over layer 362 and which are usedto interconnect the IC circuitry to produce a CMOS imager.

The self-aligned buried contact 325 between the floating diffusionregion 315 and the source follower transistor gate 320 viainterconnection lines 370, 375, 371 provides a good contact between thefloating diffusion region 315 and the source follower transistor gate320 without using processing techniques which might cause charge leakageto the substrate during device operation. The self-aligned buriedcontact 325 also allows the source follower transistor to be placedcloser to the floating diffusion region 315 thereby allowing for anincreased photosensitive area on the pixel and a short conductor lengthbetween the floating diffusion region and gate of the source followertransistor which increases the signal to noise ratio of the imager.

The pixel arrays of the present invention described with reference toFIGS. 8-15 may be further processed as known in the art to arrive atCMOS imagers representative of those discussed above with reference toFIGS. 1-4 and having the buried conductor of the present invention.

A typical processor based system which includes a CMOS imager deviceaccording to the present invention is illustrated generally at 500 inFIG. 16. A processor based system is exemplary of a system havingdigital circuits which could include CMOS imager devices. Without beinglimiting, such a system could include a computer system, camera system,scanner, machine vision, vehicle navigation, video phone, surveillancesystem, auto focus system, star tracker system, motion detection system,image stabilization system and data compression system forhigh-definition television, all of which can utilize the presentinvention.

A processor based system, such as a computer system, for examplegenerally comprises a central processing unit (CPU) 544, for example, amicroprocessor, that communicates with an input/output (I/O) device 546over a bus 552. The CMOS imager 542 also communicates with the systemover bus 452. The computer system 500 also includes random access memory(RAM) 548, and, in the case of a computer system may include peripheraldevices such as a floppy disk drive 554 and a compact disk (CD) ROMdrive 556 which also communicate with CPU 544 over the bus 552. CMOSimager 542 is preferably constructed as an integrated circuit whichincludes the CMOS imager having a buried contact line between thefloating diffusion region and the source follower transistor, aspreviously described with respect to FIGS. 8-17. It may also bedesirable to integrate the processor 554, CMOS imager 542 and memory 548on a single IC chip.

It should again be noted that although the invention has been describedwith specific reference to CMOS imaging circuits having a photogate anda floating diffusion, the invention has broader applicability and may beused in any CMOS imaging apparatus. For example, the CMOS imager arraycan be formed on a single chip together with the logic or the logic andarray may be formed on separate IC chips. Additionally, while thefigures describe the invention with respect to a photodiode type of CMOSimager, any type of photocollection devices such as photogates,photoconductors or the like may find use in the present invention.Similarly, the process described above is but one method of many thatcould be used. Additionally, although the invention is described withrespect to forming the self-aligned buried contact 325 between atransfer gate 328 and a reset gate 326, it should be understood that theself-aligned buried contact 325 may be formed between any two transistorgates. Accordingly, the above description and accompanying drawings areonly illustrative of preferred embodiments which can achieve thefeatures and advantages of the present invention. It is not intendedthat the invention be limited to the embodiments shown and described indetail herein. The invention is only limited by the scope of thefollowing claims.

1. An imaging device comprising: a substrate; a photosensitive areawithin said substrate for accumulating photo-generated charge in saidphotosensitive area; a floating diffusion region in said substrate forreceiving photo-generated charge from said photosensitive area; areadout circuit comprising at least an output transistor formed in saidsubstrate; and, a buried contact for interconnecting said floatingdiffusion region with said output transistor.
 2. The imaging deviceaccording to claim 1, wherein the accumulation of charge in saidphotosensitive area is conducted by a photoconductor.
 3. The imagingdevice according to claim 1, wherein the accumulation of charge in saidphotosensitive area is controlled by a photogate.
 4. The imaging deviceaccording to claim 1, wherein said photosensitive area is a photodiode.5. The imaging device according to claim 1, further including a chargetransfer region between said photosensitive area and said floatingdiffusion region, said charge transfer region including a field effecttransistor, wherein said buried contact is aligned to a gate structureof said field effect transistor.
 6. The imaging device according toclaim 5, wherein said output transistor is a source follower transistorand wherein said buried contact connects said floating diffusion regionand said source follower transistor via interconnectors.
 7. The imagingdevice according to claim 6, wherein said interconnectors are formed atleast in part of doped polysilicon.
 8. The imaging device according toclaim 6, wherein said interconnectors are formed of at least onerefractory metal.
 9. The imaging device according to claim 8, whereinsaid refractory metal is tungsten.
 10. The imaging device according toclaim 6, wherein said interconnectors are formed of aluminum-copperalloy.
 11. The imaging device according to claim 6, wherein saidinterconnectors are formed of copper.
 12. The imaging device accordingto claim 8, wherein said refractory metal is titanium.
 13. The imagingdevice according to claim 6 wherein the accumulation of charge in saidphotosensitive area is conducted by a photoconductor.
 14. The imagingdevice according to claim 6, wherein the accumulation of charge in saidphotosensitive area is conducted by a photogate.
 15. The imaging deviceaccording to claim 6, wherein said photosensitive area is a photodiode.16. The imaging device according to claim 5, further comprising aninsulating layer formed over the gate of said transfer transistor andsaid source follower transistor and under the buried contact.
 17. Theimaging device according to claim 16, wherein said insulating layerincludes a nitride.
 18. The imaging device according to claim 16,wherein said insulating layer includes an oxide.
 19. The imaging deviceaccording to claim 17, wherein said insulating layer is a nitride, ONO,NO, ON, or combinations thereof.
 20. An imaging device comprising asemiconductor integrated circuit substrate; a photosensitive deviceformed on said substrate for accumulating photo-generated charge in anunderlying region of said substrate; a floating diffusion region in saidsubstrate for receiving said photo-generated charge; a readout circuitcomprising at least an output transistor formed in said substrate; andsaid floating diffusion region being connected to said output by aburied contact via interconnectors.
 21. The imaging device according toclaim 20, wherein said photosensitive device is a photogate.
 22. Theimaging device according to claim 20, wherein said photosensitive deviceis a photodiode.
 23. The imaging device according to claim 20, whereinsaid photosensitive device is a photoconductor.
 24. The imaging deviceaccording to claim 20, further including a charge transfer regionbetween said photosensitive area and said floating diffusion region,said charge transfer region including a field effect transistor, whereinsaid buried contact is aligned to said field effect transistor.
 25. Theimaging device according to claim 24, wherein said output transistor isa source follower transistor and wherein said buried contact contactssaid floating diffusion region and said source follower transistor viainterconnectors.
 26. The imaging device according to claim 25, whereinsaid interconnectors are formed at least in part of doped polysilicon.27. The imaging device according to claim 25, wherein saidinterconnectors are formed of at least one refractory metal.
 28. Theimaging device according to claim 25, wherein said interconnectors areformed of aluminum-copper alloy.
 29. The imaging device according toclaim 25, wherein said interconnectors are formed of copper.
 30. Theimaging device according to claim 27, wherein said refractory metal istungsten.
 31. The imaging device according to claim 27, wherein saidrefractory metal is titanium.
 32. The imaging device according to claim24, wherein the accumulation of charge in said photosensitive area isconducted by a photoconductor.
 33. The imaging device according to claim24, wherein the accumulation of charge in said photosensitive area isconducted by a photogate.
 34. The imaging device according to claim 24,wherein said photosensitive area is a photodiode.
 35. The imaging deviceaccording to claim 20, wherein said output transistor is formed adjacentto said floating diffusion region on said substrate.
 36. The imagingdevice according to claim 20, further comprising a reset transistor forresetting said floating diffusion region to a predetermined voltage. 37.The imaging device according to claim 20, wherein said floatingdiffusion region is an n-doped region in a p-well.
 38. The imagingdevice according to claim 33, wherein said photogate is formed of dopedpolysilicon.
 39. The imaging device according to claim 34, furthercomprising a lightly n-doped region beneath said photodiode.
 40. Theimaging device according to claim 21, further comprising an insulatinglayer formed over the gate of said transfer transistor and said sourcefollower transistor and under the buried contact.
 41. The imaging deviceaccording to claim 40, wherein said insulating layer includes a nitride.42. The imaging device according to claim 40, wherein said insulatinglayer includes an oxide.
 43. The imaging device according to claim 41,wherein said insulating layer is selected from the group consisting of anitride, ONO, NO, ON, and combinations thereof.
 44. A processing systemcomprising: (i) a processor; and (ii) a CMOS imaging device coupled tosaid processor and including: a substrate; a photosensitive area withinsaid substrate for accumulating photo-generated charge in saidphotosensitive area; a floating diffusion region in said substrate forreceiving photo-generated charge from said photosensitive area; areadout circuit comprising at least an output transistor formed in saidsubstrate; and, a buried contact for interconnecting said floatingdiffusion region with said output transistor.
 45. The system accordingto claim 44, wherein the accumulation of charge in said photosensitivearea is conducted by a photoconductor.
 46. The system according to claim44, wherein the accumulation of charge in said photosensitive area iscontrolled by a photogate.
 47. The system according to claim 44, whereinsaid photosensitive area is a photodiode.
 48. The system according toclaim 44, further including a charge transfer region between saidphotosensitive area and said floating diffusion region, said chargetransfer region including a field effect transistor, wherein said buriedcontact is aligned to said field effect transistor.
 49. The systemaccording to claim 48, wherein said output transistor is a sourcefollower transistor and wherein said buried contact contacts saidfloating diffusion region and said source follower transistor viainterconnectors.
 50. The system according to claim 49, wherein saidinterconnectors are formed at least in part of doped polysilicon. 51.The system according to claim 49, wherein said interconnectors areformed of at least one refractory metal.
 52. The system according toclaim 49, wherein said interconnectors are formed of aluminum copperalloy.
 53. The system according to claim 49, wherein saidinterconnectors are formed of copper.
 54. The system according to claim51, wherein said refractory metal is tungsten.
 55. The system accordingto claim 51, wherein said refractory metal is titanium.
 56. The systemaccording to claim 48, wherein the accumulation of charge in saidphotosensitive area is conducted by a photoconductor.
 57. The systemaccording to claim 48, wherein the accumulation of charge in saidphotosensitive area is conducted by a photogate.
 58. The systemaccording to claim 48, wherein said photosensitive area is a photodiode.59. The system according to claim 48, further comprising an insulatinglayer formed over the gate of said transfer transistor and said sourcefollower transistor and under the buried contact.
 60. The systemaccording to claim 59, wherein said insulating layer includes a nitride.61. The system according to claim 59, wherein said insulating layerincludes an oxide.
 62. The system according to claim 60, wherein saidinsulating layer is a nitride, ONO, NO, ON, or combinations thereof. 63.An imaging device comprising: a substrate; a photosensitive area withinsaid substrate for accumulating photo-generated charge in saidphotosensitive area; a readout circuit comprising at least an outputtransistor formed in said substrate; and, a buried contact formed over adoped region in said substrate and between two structures on saidsubstrate for electrically connecting said imaging device, wherein saidstructures are selected from a transistor gate and an isolation region.64. The imaging device according to claim 63, wherein the accumulationof charge in said photosensitive area is conducted by a photoconductor.65. The imaging device according to claim 63, wherein the accumulationof charge in said photosensitive area is controlled by a photogate. 66.The imaging device according to claim 63, wherein said photosensitivearea is a photodiode.
 67. The imaging device according to claim 63,further including a charge transfer transistor and a reset transistor,wherein said buried contact is aligned between said transfer transistorand said reset transistor.
 68. The imaging device according to claim 67,wherein said buried contact electrically connects said imaging devicevia interconnectors.
 69. The imaging device according to claim 67,wherein said interconnectors are formed at least in part of dopedpolysilicon.
 70. The imaging device according to claim 67, wherein saidinterconnectors are formed of at least one refractory metal.
 71. Theimaging device according to claim 68, wherein said interconnectors areformed of an aluminum-copper alloy.
 72. The imaging device according toclaim 68, wherein said interconnectors are formed of copper.
 73. Theimaging device according to claim 70, wherein said refractory metal istungsten.
 74. The imaging device according to claim 70, wherein saidrefractory metal is titanium.
 75. The imaging device according to claim63, wherein said buried contact is formed between two transistor gates.76. The imaging device according to claim 63, wherein said buriedcontact is formed between two isolation regions.
 77. The imaging deviceaccording to claim 63, wherein said buried contact is formed between atransistor gate and an isolation region.
 78. The imaging deviceaccording to claim 75, further comprising an insulating layer formedover the gate of said transistors and under the buried contact.
 79. Theimaging device according to claim 78, wherein said insulating layerincludes a nitride.
 80. The imaging device according to claim 78,wherein said insulating layer includes an oxide.
 81. The imaging deviceaccording to claim 68, wherein said insulating layer is a nitride, ONO,NO, ON, or combinations thereof.
 82. The imaging device according toclaim 74, wherein said isolation region is a field oxide region.
 83. Theimaging device according to claim 63, wherein said substrate is asemiconductor integrated circuit substrate.
 84. A processing systemcomprising: (i) a processor; and (ii) a CMOS imaging device coupled tosaid processor and including: a substrate; a photosensitive area withinsaid substrate for accumulating photo-generated charge in saidphotosensitive area; a readout circuit comprising at least an outputtransistor formed on said substrate; and, a buried contact formed over adoped region in said substrate and between two structures on saidsubstrate electrically connecting said imaging device, wherein saidstructures are selected from a transistor gate and an isolation region.85. The system according to claim 84, wherein the accumulation of chargein said photosensitive area is conducted by a photoconductor.
 86. Thesystem according to claim 84, wherein the accumulation of charge in saidphotosensitive area is controlled by a photogate.
 87. The systemaccording to claim 84, wherein said photosensitive area is a photodiode.88. The system according to claim 84, further including a chargetransfer transistor and a reset transistor, wherein said buried contactis aligned between the gates of said charge transfer transistor and saidreset transistor.
 89. The system according to claim 88, wherein saidburied contact electrically connects said imaging device viainterconnectors.
 90. The system according to claim 89, wherein saidinterconnectors are formed at least in part of doped polysilicon. 91.The system according to claim 89, wherein said interconnectors areformed of at least one refractory metal.
 92. The system according toclaim 91, wherein said refractory metal is tungsten.
 93. The systemaccording to claim 91, wherein said refractory metal is titanium. 94.The system according to claim 84, wherein said buried contact is formedbetween two transistor gates.
 95. The system according to claim 84,wherein said buried contact is formed between two isolation regions. 96.The system according to claim 84, wherein said buried contact is formedbetween a transistor gate and an isolation region.
 97. The systemaccording to claim 84, further comprising an insulating layer formedover the gate of said transistors and under the buried contact.
 98. Thesystem according to claim 97, wherein said insulating layer includes anitride.
 99. The system according to claim 97, wherein said insulatinglayer includes an oxide.
 100. The system according to claim 97, whereinsaid insulating layer is a nitride, ONO, NO, ON, or combinationsthereof.
 101. The system according to claim 95, wherein said isolationregion is a field oxide region.
 102. The system according to claim 84,wherein said substrate is a semiconductor integrated circuit substrate.